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              TEGPRODUCTS

              TEG 製品一覧表


              Material Au Solder Cu Ni Electroless
              Ni/Au
              Function
              - +SnAg +Ni
              +SnAg
              - +SnAg
              Form PLATE STUD PLATE MOUNT PLATE PLATE PLATE PLATE PLATE PLATE ---
              Image ---
              MB50 Daisy
              MB60 Daisy
              MB80 Daisy
              AS8R Daisy
              MB130A Daisy
              MB6020 Daisy
               CC40   Daisy
              IP40 Daisy/Vernier
              Bump Short/
              Breakdown Voltage
               IP40A
              CC80 Daisy
              IP80 Daisy
              CC80TSV ●/◎ TSV
              CC80MarkⅡ Daisy/Migration
              CC80MarkⅣ Daisy
              IP80MarkⅣ Daisy
              WM40-0101 ---
              WM40-0102 Daisy
              WM40-0103 Daisy
              IPWM40 Daisy/
              Bump Short/
              Break Down Voltage
              HBM-T Daisy
              IPHBM Daisy
              FC150LC Daisy
              FC120 Daisy
              FC150 Daisy
              FC150SC Daisy
              FC200 Daisy
              FC200SC Daisy
              FBW ---
              FBWA ---
              WLP Daisy
              Free Size Cut Daisy
              ME Migration
              STAC Stress/
              Thermal/
              HeatGeneration
              STAC150FA
              STAC300FA
              HPW Thermal/
              Heat Generation
              HPW150FA
              HPW300FA
              HPWTSV TSV
              HPW MarkⅡ Thermal/
              Heat Generation/
              Insulation Resistance
              LCD30A Daisy
              PWB Bondability

               ● Top Side / ◎Bottom Side

              Cu Pillar Bump TEG

              Solder Bump TEG

              Electroless Plating Bump TEG



              TEG 製品詳細


              WALTS-TEG MB50-0101JY

              MB50-0101JY
              Specification Type-A Type-B
              Wafer Size 8 inch 8 inch
              Wafer Thickness 725±25μm 725±25μm
              Chip Size 7.3mm■ 7.3mm■
              Pad Pitch 50μm 50μm
              Function Daisy Chian Daisy Chian
              Bump Size Au: 30μm■
              Cu: 30μm■
              Cu: φ25μm●
              Bump Height (Cu30μm+SnAg15μm)
              Number of Pad 544 pads/chip 544 pads/chip
              Number of Chip 478 chips/wafer 478 chips/wafer
              Polyimide (Option)
               Evaluation KIT WALTS-KIT MB50-0102JY_NCR【MAP】
              WALTS-KIT MB50-0102JY_CR【MAP】
              WALTS-KIT MB50-0104JY_CR【MAP】


              WALTS-TEG MB60-0101JY

              ○○○○○○○○イメージ
              Specification MB60-0101JY
              Wafer Size 8 inch
              Wafer Thickness 725±25μm
              Chip Size 7.3mm■
              Pad Pitch 60μm
              Function Daisy Chian
              Bump Size
              Bump Height
              Number of Pad 448 pads/chip
              Number of Chip 478 chips/wafer
              Polyimide (Option)
              Evaluation KIT ---


              WALTS-TEG MB80-STG0101JY

              ○○○○○○○○イメージ
              Specification TYPE-A  TYPE-B
              Wafer Size 8 inch 8 inch
              Wafer Thickness 725±25μm 725±25μm
              Chip Size 7.3mm■ 7.3mm■
              Pad Pitch 80μm Staggerd 80μm Staggerd
              Function Daisy Chian Daisy Chian
              Bump Size 38μm■
              Bump Height (Wire Bonding) (Cu30μm+SnAg15μm)
              Number of Pad 648 pads/chip
              82 pads × 4 (Outer Line)
              80 pads × 4 (Innter Line)
              648 pads/chip
              82 pads × 4 (Outer Line)
              80 pads × 4 (Innter Line)
              Number of Chip 478 chips/wafer 478 chips/wafer
              Polyimide (Option)
              Evaluation KIT WALTS-KIT CC80-0104JY (ModelⅣ)


              WALTS-TEG AS8R

              TEG_AS8R
              Specification AS8R
              Wafer Size 8 inch
              Wafer Thickness 725±25μm
              Chip Size 3.5 mm■
              Pad Pitch 120μm
              Function Daisy Chian
              Bump Size
              Bump Height
              Number of Pad 96 pads/chip (Outer Line)
              88 pads/chip (Inner Line)
              Number of Chip 2266 chips/wafer
              Polyimide (Option)
              Evaluation KIT ---


              WALTS-TEG MB130A-STG0101JY

              TEG_MB130-STG0101JY
              Specification MB130A
              TYPE-A TYPE-B
              Wafer Size 8 inch 8 inch
              Wafer Thickness 725±25μm 725±25μm
              Chip Size 2.13 mm■ 2.13 mm■
              Pad Pitch 130μm 130μm
              Function Daisy Chian Daisy Chian
              Bump Size Φ70μm
              Bump Height (Wire Bonding)
              (Au Stud Bump)
              (Cu30μm+SnAg15μm)
              Number of Pad 108 pad/chip
              15 pads× 4 (outer Line)
              12 pads× 4 (Inner Line)
              108 pad/chip
              15 pads× 4 (outer Line)
              12 pads× 4 (Inner Line)
              Number of Chip 6060 chips/wafer 6060 chips/wafer
              Polyimide (Option)
              Evaluation KIT --- ---


              WALTS-TEG MB6020-0102JY

              TEG_MB6020-0101JY
              Specification MB6020-0102JY
              Wafer Size 8 inch
              Wafer Thickness 725±25μm
              Chip Size 3.0 mm■
              Pad Pitch 60 / 55 / 50 / 45 / 40 / 35 / 30 / 25 / 20 μm
              Function Daisy Chian
              Bump Size
              Bump Height
              Number of Pad (40×4) (40×4) (38×4)
              (38×4) (36×4) (34×4)
              (30×4) (26×4) (18×4)
              Number of Chip 3016 chips/wafer
              Polyimide (Option) ---
              Evaluation KIT ---


              WALTS-TEG CC40-0101JY

              TEG_CC40-0101JY
              Specification CC40-0101JY
              Wafer Size 8 inch
              Wafer Thickness 725±25μm
              Chip Size 7.3 mm■
              Pad Pitch Model Ⅰ: 40μm Staggered + 40μm Full Area 
              Model Ⅱ: 40μm Staggered          
              Function Daisy Chian
              Bump Size Model Ⅰ: 22μm●
              Model Ⅱ: 22μm●
              Bump Height (Cu15μm+SnAg10μm)
              Number of Pad Model Ⅰ: 29576 pads/chip
              Model Ⅱ: 1352 pads/chip
              Number of Chip 478 chips/wafer
              Polyimide (Option) ---
              Evaluation KIT WALTS-TEG IP40-0101JY (Silicon Interposer)
              WALTS-TEG IP40A-0101JY (Silicon Interposer)


              WALTS-TEG IP40-0101JY

              TEG_IP40-0101JY
              Specification IP40-0101JY(ModelⅠ / ModelⅡ)
              Wafer Size 8 inch
              Wafer Thickness 725±25μm
              Chip Size 10.0 mm■
              Pad Pitch (1) 40μm pitch Full area + Staggered (Model Ⅰ)
              40μm pitch Staggered (Model Ⅱ)    
              (2) 250μm pitch Periphera (Outer Pad)     
              Function Daisy Chian
              Bump Short Check
              Vernier
              Breakdown Voltage Check between the Bumps
              Bump Size ---
              Bump Height ---
              Number of Pad Model Ⅰ:(1) 29576 pads/chip (2) 124 pads/chip (Outer Pad)
              Model Ⅱ:(1) 1352 pads/chip (2) 124 pads/chip (Outer Pad)
              Number of Chip 228 chips/wafer
              Polyimide (Option) ---
              Evaluation KIT ---


              WALTS-TEG IP40A-0101JY

              TEG_IP40A-0101JY
              Specification IP40A-0101JY(ModelⅠ)
              Wafer Size 12 inch
              Wafer Thickness 775±25μm
              Chip Size 10.0 mm■
              Pad Pitch (1) 40μm pitch Full area + Staggered (ModelⅠ)
              (2) 250μm pitch Periphera (Outer Pad)     
              Function Daisy Chian
              Bump Short Check
              Vernier
              Breakdown Voltage Check between the Bumps
              Bump Size ---
              Bump Height ---
              Number of Pad Model Ⅰ:(1) 29576 pads/chip (2) 124 pads/chip (Outer Pad)
              Number of Chip 616 chips/wafer
              Polyimide (Option) ---
              Evaluation KIT ---


              WALTS-TEG CC80-0101JY  >> CONCEPT

              ○○○○○○○○イメージ
              Specification CC80-0101JY
              Wafer Size 8 inch
              Wafer Thickness 725±25μm
              Chip Size 7.3 mm■
              Pad Pitch 80μm Staggered (Periphera)
              300μm Full Area (Center Core)
              Function Daisy Chian
              Bump Size Model Ⅰ: 38μm■ or φ42μm●
              Model Ⅳ: 38μm■
              Bump Height (Cu30μm+SnAg15μm)
              Number of Pad Model Ⅰ: 1048 pads/chip
              Model Ⅳ: 648 pads/chip
              Number of Chip 478 chips/wafer
              Polyimide (Option)
              Evaluation KIT WALTS-TEG IP80-STG0101JY (Silicon Interposer)
              WALTS-KIT CC80-0104JY


              WALTS-TEG IP80-0101JY  >> CONCEPT

              ○○○○○○○○イメージ
              Specification IP80-0101JY
              Wafer Size 8 inch
              Wafer Thickness 725±25μm
              Chip Size 10.0 mm■
              Pad Pitch (1) 80μm Staggered (Inner Pad)
              (2) 300μm Full Area (Center Core)
              (3) 250μm Periphera (Outer Pad)
              Function Daisy Chian
              Bump Size
              Bump Height
              Number of Pad (1) 648 pads/chip
              (2) 400 pads/chip
              (3) 124 pads/chip
              Number of Chip Cu piller 256chip/wafer /ElectrolessNiAu 256chip/wafer
              Polyimide (Option)
              Evaluation KIT ---


              WALTS-TEG CC80TSV-0101JY  >> CONCEPT

              TEG_CC80TSV
              Specification CC80TSV-1 CC80TSV-2
              Wafer Size 8 inch 8 inch
              Chip Thickness 100μm 100μm
              Chip Size 7.3 mm■ 7.3 mm■
              Pad Pitch 80μm Staggered (Periphera)
              300μm Full Area (Center Core)
              80μm Staggered (Periphera)
              300μm Full Area (Center Core)
              TSV Hole Diameter φ40μm● φ40μm●
              Top
              Side
              Electrode Electroless Ni/Au Cu+SnAg
               Bump Size φ48μm●(Option: φ42μm●) 38μm■ (Option: φ42μm●)
               Bump Height (8~12μm) (Cu20μm+SnAg15μm)
              Bottom
              Side
              Electrode Electroless Ni/Au Electroless Ni/Au
               Bump Size φ48μm●(Option: φ42μm●) φ48μm●(Option: φ42μm●)
               Bump Height (8~12μm) (8~12μm)
              Number of Chip 478 chips/wafer 478 chips/wafer
              Evaluation KIT WALTS-TEG CC80-0101JY
              WALTS-TEG IP80-0101JY (Silicon Interposer)


              WALTS-TEG CC80MarKⅡ-0101JY

              TEG_CC80MarkII
              Specification CC80MarkⅡ-0101JY【STD】
              Wafer Size 8 inch
              Wafer Thickness 725±25μm
              Chip Size 12.0 mm■
              Pad Pitch 80μm Staggered (Periphera)
              200μm Full Area (Center Core)
              Function Daisy Chain & Migration
              Bump Size φ31μm●
              Bump Height (Cu30μm+SnAg15μm)
              Number of Pad 1660 pads/chip (Periphera)
              2916 pads/chip (Center Core)
              Number of Chip 177 chips/wafer
              Polyimide (Option) ---
              Evaluation KIT WALTS-KIT CC80MarkⅡ-0201JY


              WALTS-TEG CC80MarkIV-0101JY  >> CONCEPT

              TEG_CC80TSV
              Specification CC80MarkIV-0101JY
              Wafer Size 8inch
              Wafer Thickness 725±25μm
               Chip Chip A Chip B
              Chip Size 6.0 mm × 10.0 mm 4.0 mm × 10.0 mm
               Pad Pitch
              ① 40μm[10Row]×50μm[192Row] (Peripheral)
              ② 80μm staggered[3Row] (Center core)
              ③ 150μm Min. Lattice
              Function Daisy Chain
              Electrode Cu Pillar
              Bump Size φ25μm●
              Number of Bump/Pad ①1920bumps/1920pads
              ② 687 bumps/ 687 pads
              ③1743bumps/1743pads
              ①1920bumps/1920pads
              ② 531 bumps/ 531 pads
              ③ 978 bumps/ 978 pads
              Number of Chip Chip A:228chips/wafer  Chip B:228chips/wafer
              Evaluation KIT WALTS-TEG IP80MarkIV-0101JY (Sillicon Interposer)


              WALTS-TEG IP80MarkIV-0101JY  >> CONCEPT

              TEG_CC80TSV
              Specification IP80MarkIV-0101JY
              Wafer Size 8inch
              Wafer Thickness 725±25μm
              Chip Size 15.0 mm × 15.0 mm
               Pad Pitch
              ① 40μm[10Row]×50μm[192Row]×2 (Peripheral)
              ② 80μm staggered[3Row] (Center core)
              ③ 150μm Min. Lattice
              ④ 300μm (Staggered)
              Function Daisy Chain
              Electrode Electroless Ni/Au plating
              Bump Size ①27μm●?、?7μm●?、?7μm●?、?41μm■
              Number of Bump/Pad ①3840bumps/3840pads
              ②1172bumps/1172pads
              ③2721bumps/2721pads
              ④328bumps/328pads
              Number of Chip 97 chips/wafer
              Evaluation KIT ---


              WALTS-TEG WM40-0101JY  CONCEPT

              TEG_CC80TSV
              Specification WM40-0101JY
              Wafer Size 8inch 
              Wafer Thickness 50μm
              Chip Size 10 mm × 8 mm
              Function ---
              Top
              Side
              Electrode Cu Pillar
              Bump Size φ20μm●
              Bump Height (Cu15μm + SnAg8μm)
              Bump Pitch ① 40μm ②300μm
              Number of Bump ①1200 bumps ② 714 bumps
              Bottom
              Side
              Electrode Cu Post
              Bump Size φ26μm●
              Bump Height (Cu 6μm)
              Bump Pitch ① 40μm ②300μm
              Number of Bump ①1200 bumps ② 714 bumps
              Number of Chip 312 chips/wafer
              Evaluation KIT WALTS-KIT CC80MarkII-0201JY

               

              WALTS-TEG WM40-0102JY  CONCEPT 

              TEG_CC80TSV
              Specification WM40-0102JY
              Wafer Size 8inch
              Wafer Thickness 725±25μm
              Chip Size 10 mm × 8 mm
              Function Daisy Chain
              Electrode Cu Pillar
               Bump Size φ20μm●
              Bump Height (Cu15μm + SnAg8μm)
              Bump Pitch ① 40μm ②300μm
              Number of Bump ①1200 bumps ② 714 bumps
              Number of Chip 312 chips/wafer
              Evaluation KIT WALTS-KIT CC80MarkII-0201JY


              WALTS-TEG WM40-0103JY

              TEG_WM40-0103JY
              Specification WM40-0103JY
              Wafer Size 8inch
              Wafer Thickness 725±25μm
              Chip Size 10 mm × 8 mm
              Function Daisy Chain
              Electrode Cu Pillar
              Bump Size φ20μm●
              Bump Height (Cu15μm + SnAg8μm)
              Bump Pitch ① 40μm ②300μm
              Number of Bump I/O area
              40μm pitch x 1200 bamps
              Dummy area
              300μm pitch x 714 bumps
              Number of Chip 312 chips/wafer
              Evaluation KIT ---


              WALTS-TEG IPWM40-0101JY

              TEG_IPWM40-0101JY
              Specification IPWM40-0101JY
              Wafer Size 8inch
              Wafer Thickness 725±25μm
              Chip Size 13.0mm■
              Function Daisy Chain
              Bump Short Check
              Break Down Voltage Check Between Bump
              Electrode Electroless Ni/Au ptating
              Bump Size φ25μm●
              Bump Height 2.5μm
              Bump Pitch ① 40μm ②300μm
              Number of Bump ①1200 Bumps ②714 Bumps
              Probe pad 72pad
              (same pad area as WM40-0103JY)
              Number of Chip 148 chips/wafer
              Evaluation KIT ---


              WALTS-TEG HBM-T-0100JY >> CONCEPT

              TEG_HBM-T-0100JY
              Specification HBM-T-0100JY
              Wafer Size 8inch
              Wafer Thickness 725±25μm
              Chip Size 10.0mm×8.0mm
              Scribe Width 120μm
              Base Layer P-TEOS
              Metal Layer TiN/AlCu
              PV Layer HDP / P-SiN
              PV Opening φ8μm
              Pad Size 27μm■
              Bump Size Cu5μm×SnAg12μm, φ18μm
              Number of Pad I/O area 7200 pad Dummy area 6544 pad
              Number of Bump I/O area 7200 bump Dummy area 7456 bump
              Number of Chip 312 Chip / Wafer
              Evaluation KIT ---


              WALTS-TEG IPHBM-0100JY >> CONCEPT

              TEG_IPHBM-0100JY
              Specification IPHBM-0100JY
              Wafer Size 8inch
              Wafer Thickness 725±25μm
              Chip Size 12.0mm×10.0mm
              Scribe Width 120μm
              Base Layer P-TEOS
              Metal Layer TiN/AlCu
              PV Layer HDP / P-SiN
              PV Opening φ18μm
              Connection Pad Size 27μm■
              Probe Pad Size 300μm■
              Bump Size NiAu2.5μm×, φ23μm
              Number of Pad I/O area : 7200 pad Dummy area : 7456 pad Probe pad : 96 pad
              Number of Chip 204 Chip / Wafer
              Evaluation KIT ---


              WALTS-TEG FC150LC-0102JY

              TEG_FC150LCJY_Si
              Specification FC150LC-0101JY
              Wafer Size 12 inch
              Wafer Thickness 775±25μm
              Chip Size 25.0mm■
              Pad Pitch 150 μm (Area)
              Function Daisy Chian
              Bump Size φ75μm●
              Bump Height Cu pillar (Cu30μm+SnAg15μm)
              Number of Pad 25921 pads/chip (161×161)
              Number of Chip 89 chips/wafer
              Polyimide (Option)
              Evaluation KIT WALTS-KIT FC150LC-0302JY

               

              WALTS-TEG FC120JY

              TEG_FC120JY_Si
              Specification TYPE-B
              Wafer Size 8 inch
              Wafer Thickness 775±25μm
              Chip Size 10.0mm■
              Pad Pitch 120μm
              Function Daisy Chian
              Pad Size 80μm■
              Passivation opening φ20μm●
              Polyimide opeinng φ40μm●
              UBM Size φ65μm●
              Bump Size φ60μm●
              Number of Pad 5776 pads/chip (76×76)
              Number of Chip 208 chips/wafer
              Evaluation KIT WALTS-KIT FC120


              WALTS-TEG FC150JY

              TEG_FC150JY_Si
              Specification Type-A Type-B
              Wafer Size 8 inch 8 inch
              Wafer Thickness 725±25μm 725±25μm
              Chip Size 10.0mm■ 10.0mm■
              Pad Pitch 150 μm (Area) 150 μm (Area)
              Function Daisy Chian Daisy Chian
              Bump Size φ85μm● φ75μm●
              Bump Height Ball Mounted Solder Bump (80μm) Cu Pillar (Cu30μm+SnAg15μm)
              Number of Pad 3721 pads/chip (61×61) 3721 pads/chip (61×61)
              Number of Chip 208 chips/wafer 208 chips/wafer
              Polyimide (Option)
              Evaluation KIT WALTS-KIT 01A150P-10-2
              WALTS-KIT FC150-0104JY 2×2
              WALTS-KIT FC150R-0101JY 2×2


              WALTS-TEG FC150SCJY

              TEG_FC150SCJY
              Specification Type-A Type-B
              Wafer Size 8 inch 8 inch
              Wafer Thickness 725±25μm 725±25μm
              Chip Size 5.02mm■ 5.02mm■
              Pad Pitch 150 μm (Area) 150 μm (Area)
              Function Daisy Chian Daisy Chian
              Bump Size φ90μm● φ80μm●
              Bump Height Ball Mounted Solder Bump (80μm) Cu Pillar (Cu30μm+SnAg15μm)
              Number of Pad 784 pads/chip (28×28) 784 pads/chip (28×28)
              Number of Chip 832 chips/wafer 832 chips/wafer
              Polyimide (Option)
              Evaluation KIT ---


              WALTS-TEG FC200JY

              TEG_FC200JY_Si
              Specification Type-A Type-B
              Wafer Size 8 inch 8 inch
              Wafer Thickness 725±25μm 725±25μm
              Chip Size 10.0mm■ 10.0mm■
              Pad Pitch 200μm (Area) 200μm (Area)
              Function Daisy Chian Daisy Chian
              Bump Size φ100μm● φ90μm●
              Bump Height Ball Mounted Solder Bump (80μm) Cu Pillar (Cu30μm+SnAg15μm)
              Number of Pad 2116 pads/chip (46×46) 2116 pads/chip (46×46)
              Number of Chip 228 chips/wafer 228 chips/wafer
              Polyimide (Option)
              Evaluation KIT WALTS-KIT 01A200P-10
              WALTS-KIT 01A200P-10_C400
              WALTS-KIT FC200-0101JY 2×2
              WALTS-KIT FC200-0102JY 2×2


              WALTS-TEG FC200SCJY

              TEG_FC200SCJY
              Specification Type-A Type-B
              Wafer Size 8 inch 8 inch
              Wafer Thickness 725±25μm 725±25μm
              Chip Size 5.02mm■ 5.02mm■
              Pad Pitch 200μm (Area) 200μm (Area)
              Function Daisy Chian Daisy Chian
              Bump Size φ100μm● φ90μm●
              Bump Height Ball Mounted Solder Bump (80μm) Cu Pillar (Cu30μm+SnAg15μm)
              Number of Pad 484 pads/chip (22×22) 484 pads/chip (22×22)
              Number of Chip 832 chips/wafer 832 chips/wafer
              Polyimide (Option)
              Evaluation KIT WALTS-KIT FC200SC-0202JY 3×3


              WALTS-TEG FBW200A-0000JY  UPDATE

              WALTS-TEG FBW150-0001JY

              WALTS-TEG FBW130-0001JY

              WALTS-TEG FBW100-0001JY

              WALTS-TEG FBW80-0001JY

              WALTS-TEG FBW40A-0001JY

              TEG_FBW200
              Specification FBW200A FBW150 FBW130 FBW100 FBW80 FBW40A
              Wafer Size 12 inch 8 inch 8 inch 8 inch 8 inch 12 inch
              Wafer Thickness 775±25μm 725±25μm 725±25μm 725±25μm 725±25μm 775±25μm
              Bump Pitch 200μm 150μm 130μm 100μm 80μm 40μm
              Electrode Cu Pillar Cu Pillar Cu Pillar Cu Pillar Cu Pillar Cu Pillar
              Bump Size φ90μm φ75μm φ65μm φ50μm φ40μm φ20μm
              Bump Height (Max.60μm) (Max.60μm) (Max.60μm) (Max.60μm) (Max.50μm) (Max.45μm)


              WLP TEG (0.5mm pitch & 0.4mm pitch & 0.3mm pitch)

              WLP_0.3mm
              Specification 0.5mm pitch BGA 0.4mm pitch BGA 0.3mm pitch BGA
              Wafer Size 8 inch 8 inch 8 inch
              Wafer Thickness 400±20μm 400±20μm 400±20μm
              Chip Size 6.0mm■ 6.0mm■ 6.0mm■
              BGA Pitch 500μm 400μm 300μm
              Function Daisy Chain Daisy Chain Daisy Chain
              Electrode Ball Mounted Solder Bump Ball Mounted Solder Bump Ball Mounted Solder Bump
              Bamp Size (φ300μm●) (φ260μm●) (φ200μm●)
              Number of Pad 112 pins/chip 144 pins/chip 264 pins/chip
              Number of Chip 714 chips/wafer 714 chips/wafer 712 chips/wafer


              WLP TEG (Free Size Cut TEG:TEG0306,TEG03507,TEG0408,TEG0510)

              WLP_TEG0306
              Specification TEG0306 TEG03507 TEG0408 TEG0510
              Wafer Size 8 inch 8 inch 8 inch 8 inch
              Wafer Thickness 400μm 400μm 400μm 400μm
              Cut Size (Min.) 600μm■ 700μm■ 800μm■ 1000μm■
              Pad Pitch 300μm 350μm 400μm 500μm
              Function Daisy Chain Daisy Chain Daisy Chain Daisy Chain
              Electrode Ball Mounted Solder Bump Ball Mounted Solder Bump Ball Mounted Solder Bump Ball Mounted Solder Bump
              Post Size 180μm 210μm 200μm 250μm
              Number of Chip 79257 chips/wafer 58490 chips/wafer 44161 chips/wafer 28212 chips/wafer


              WALTS-TEG ME0102JY

               [for Migration Test]

              TEG_ME0102
              Specification WALTS-TEG ME0102JY
              Wafer Size 12 inch
              Chip Size 20mm×25mm
              Chip Name Chip_10_15 Chip_20_25 Chip_30_35
              Metal Height 5.5μm
              Facing Legth 3mm
              Line/Space 15μm/10μm 15μm/15μm 15μm/20μm 15μm/25μm 15μm/30μm 15μm/35μm
              Pitch 25μm 30μm 35μm 40μm 45μm 50μm
              Number of Chip 34 chips/wafer 40 chips/wafer 34 chips/wafer


              WALTS-TEG STAC-0101JY 

               [for Stress & Thermal Resistance Analysis]

              TEG_STAC-0101JY
              Specification STAC-0101JY
              Wafer Size 6 inch(Orientation Flat)
              Wafer Thickness 550±25μm
              Chip Size 3.0mm■
              Pad Pitch 300μm
              Function Stress Analysis by Piezoresistance
              Thermal Analysis by Diode
              Heat Generarion by Resistance
              Electrode (Al Pad, Cu Pillar Bump, Solder Bump, Au Bump)
              Number of Pad 32 pads/chip
              Number of Chip 1596 chips/wafer
              Polyimide (Option)
              <Option> Back Side Metallization
              Evaluation KIT WALTS-KIT STAC(S)-0202JY


              WALTS-TEG STACTEG-150FA-0101JY

              WALTS-TEG STACTEG-300FA-0101JY

              TEG_STACTEG
              Specification STACTEG-150FA
              STACTEG-300FA
              Base Wafer:WALTS-TEG STAC-0101JY 
              Wafer Size 6 inch (Orientation Flat) 6 inch (Orientation Flat)
              Wafer Thickness 550±25μm 550±25μm
              Chip Size 3.0mm■ 3.0mm■
              Pad Pitch 150μm 300μm
              Function Stress Analysis by Piezoresistance
              Thermal Analysis by Diode
              Heat Generarion by Resistance
              Stress Analysis by Piezoresistance
              Thermal Analysis by Diode
              Heat Generarion by Resistance
              Bump Size φ110μm● φ110μm●
              Bump Height (Ni5μm+SnAg75μm) (Cu50μm+SnAg10μm)
              Number of Pad 32 pads/chip 32 pads/chip
              Number of Bump 32 bumps + 253 Dummy bumps 32 bumps + 64 Dummy bumps
              Number of Chip 1596 chips/wafer 1596 chips/wafer
              Polyimide (Option)
              <Option> Back Side Metallization Back Side Metallization
              Evaluation KIT WALTS-KIT STAC(S)-0202JY


              WALTS-TEG HPW-0101JY

               [for Thermal Resistance Analysis at High Power]

              TEG_HPW-0101JY
              Specification HPW-0101JY
              Wafer Size 8 inch(Notch)
              Wafer Thickness 725±25μm
              Chip Size 3.0mm■
              Pad Pitch 300μm
              Function Thermal Analysis by Diode
              Heat Generarion by Resistance
              Electrode (Al Pad, Cu Pillar Bump, Solder Bump, Au Bump)
              Number of Pad 32 pads/chip
              Number of Chip 2964 chips/wafer
              Polyimide (Option)
               <Maximum Output> Max. 14.5W/Chip
              <Option> Back Side Metallization


              WALTS-TEG HPWTEG-150FA-0101JY

              WALTS-TEG HPWTEG-300FA-0101JY

              TEG_FC200SCJY
              Specification HPWTEG-150FA HPWTEG-300FA
              Base Wafer:WALTS-TEG HPW-0101JY 
              Wafer Size 8 inch(Notch) 8 inch(Notch)
              Wafer Thickness 725±25μm 725±25μm
              Chip Size 3.0mm■ 3.0mm■
              Pad Pitch 150μm 300μm
              Function Thermal Analysis by Diode
              Heat Generarion by Resistance
              Thermal Analysis by Diode
              Heat Generarion by Resistance
              Bump Size φ110μm● φ110μm●
              Bump Height (Ni5μm+SnAg75μm) (Cu50μm+SnAg10μm)
              Number of Pad 32 pads/chip 32 pads/chip
              Number of Bump 32 bumps + 253 Dummy bumps 32 bumps + 64 Dummy bumps
              Number of Chip 2964 chips/wafer 2964 chips/wafer
              <Option> Back Side Metallization Back Side Metallization
              Evaluation KIT ---


              WALTS-TEG HPW TSV-0101JY

              TEG_CC80TSV
              Specification HPW TSV-0101JY
              Base Wafer:WALTS-TEG HPW-0101JY(SiN) 
              Wafer Size 8 inch(Notch)
              Wafer Thickness 100μm
              Chip Size 3.0mm■
              Top
              Side
              Electrode Cu Pillar
              Bump Pitch 300μm
              Bump Size φ100μm●
              Bump Height (Cu50μm+SnAg10μm)
              Number of Bump 32 bumps + 64 Dummy bumps
              TSV Via Size φ90μm●
              Bottom
              Side 
              Electrode Electroless Ni/Au Plating
              Bump Pitch 300μm
              Bump Size φ100μm●
              Bump Height (8μm)
              Number of Bump 32 bumps
              Number of Chip 2964 chips/wafer
              Evaluation KIT ---


              WALTS-TEG HPW MarkⅡ-0101JY

              TEG_HPW-Mark2_0101JY
              Specification HPW MarkⅡ-0101JY
              Wafer Size 8 inch(Notch)
              Wafer Thickness 725±25μm
              Chip Size 10.0mm■
              Pad Pitch
              (Passivation opening)
              Pad①~③ 0.4mm■ (0.3mm■)
              Pad④ 2.72mm×0.5mm (2.32mm×0.3mm)
              Scribe line width 120μm
              Function Thermal Analysis by Diode
              Heat Genaration by Resistance
              Insulation Resistance Test by High Voltage Plate
              Electrode Al Pad
              Number of Pads 12 pads
              Number of Chips 244 chips/wafer
              Maximum Output Max. 55W/Chip
              <Option> Back Side Metallization

               


              WALTS-TEG LCD30A-0101JY

              TEG_LCD30-0101JY
              Specification LCD30A-0101JY
              Wafer Size 8 inch
              Wafer Thickness 725±25μm
              Chip Size 15.1 mm × 1.6 mm
              Pad Pitch 30μm
              Function Daisy Chian
              Bump Size 20μm×100μm
              Bump Height 15or20
              Number of Pad 726 pads/chip
              Number of Chip 1056 chips/wafer
              Polyimide (Option)
              Evaluation KIT WALTS-KIT LCD30-0101JY
              WALTS-KIT COF30-0101JY


              WALTS-TEG PWB0101JY

              TEG_PWB-0101JY
              Specification TYPE-A TYPE-B
              Wafer Size φ 6 inch φ 6 inch
              Wafer Thickness 625±25μm 625±25μm
              Chip Size 6.0mm■ 6.0mm■
              Metal Thickness Al-Si 3μm Al-Si 4.5μm
              Function Bondability Check Bondability Check
              Pad config Plane Plane
              Pad Size 5060×2420μm
              270×5300μm
              5060×2420μm
              270×5300μm
              Passivation Opening 5060×2420μm
              250×5280μm
              5060×400μm
              250×5280μm
              Scribe width 100μm 100μm


              GOGO专业大尺度亚洲高清人体